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Sep 22 – 27, 2024
Jefferson Lab
US/Eastern timezone

Development of GaN as a Robust Spin-Polarized Photocathode at Cornell University

Sep 26, 2024, 4:00 PM
20m
Cebaf Center Auditorium (Jefferson Lab)

Cebaf Center Auditorium

Jefferson Lab

12000 Jefferson Ave. Newport News, VA 23606

Speaker

Samuel Levenson

Description

The creation of a durable spin-polarized electron source that can maintain mA-scale average beam currents over an extended period in a photoinjector is essential for the success of future accelerator facilities like the International Linear Collider (ILC). In the Bright Beams Laboratory at Cornell University, photoemission of a spin-polarized electron beam from gallium nitride (GaN) photocathodes has been measured and characterized. In this proceeding, we overview the development, demonstration and current status of GaN as a robust spin polarized source.

Primary author

Samuel Levenson

Co-authors

Alice Galdi Benjamin Dickensheets Debdeep Jena Huili Xing Ivan Bazarov Jared Maxson Jimy Encomendero Dr Matthew Andorf Vladimir Protasenko

Presentation materials