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Sep 22 – 27, 2024
Jefferson Lab
US/Eastern timezone

Polarized Photocathode R&D at BNL and spin consideration for the EIC

Sep 24, 2024, 1:50 PM
20m
Cebaf Center Auditorium (Jefferson Lab)

Cebaf Center Auditorium

Jefferson Lab

12000 Jefferson Ave. Newport News, VA 23606

Speaker

Jyoti Biswas (Brookhaven National Laboratory)

Description

Superlattice GaAs photocathodes are vital for producing polarized electron beams in key accelerator facilities, such as the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson National Laboratory and the Electron-Ion Collider (EIC) at Brookhaven National Laboratory. The electron pre-injector at the EIC requires a 7 nC bunch with at least 85% spin polarization from a GaAs-based superlattice cathode. The doping density of the very surface layer of the cathode needs to be optimized to extract a high bunch charge beam from the high voltage DC gun. The polarization axis of the emitted beam is longitudinal, and it will be rotated to transverse direction using two Wien filters, each rotating the spin by 45 degrees. In this paper, we will report on our progress in recent R&D efforts for polarized photocathodes, and spin considerations for the EIC

Primary author

Jyoti Biswas (Brookhaven National Laboratory)

Co-authors

Erdong wang (bnl) Dr Omer Rahman (Brookhaven National Laboratory) Mr John Skaritka (Brookhaven National Laboratory)

Presentation materials